HM4N10PR mosfet equivalent, n-channel enhancement mode power mosfet.
* VDS = 100V,ID = 4A RDS(ON) <160mΩ @ VGS=10V (Typ:136mΩ) RDS(ON) <170mΩ @ VGS=4.5V (Typ:140mΩ)
* High density cell design for ultra low Rdson
* Fully charact.
General Features
* VDS = 100V,ID = 4A RDS(ON) <160mΩ @ VGS=10V (Typ:136mΩ) RDS(ON) <170mΩ @ VGS=4.5V (Typ:140mΩ)
The HM4N10PR uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
General Features
* VDS = 100V,ID = 4A RDS(ON) <160mΩ @ VGS=10V (Typ:136mΩ) RDS(ON) <170mΩ.
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